npn silicon planar medium power high gain transistor issue 2 ? may 94 features * 12 volt v ceo * gain of 400 at i c =3 amps * very low saturation voltage applications * darlington replacement * flash gun convertors * battery powered circuits * motor drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 12 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5v peak pulse current i cm 10 a continuous collector current i c 3a practical power dissipation* p totp 1.5 w power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 12 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 12 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =10v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.04 0.06 0.18 0.35 v v v v i c =0.1a, i b =1ma i c =0.1a, i b =0.5ma* i c =1a, i b =50ma* i c =3a, i b =20ma* base-emitter saturation voltage v be(sat) 1.1 v i c =3a, i b =20ma* base-emitter turn-on voltage v be(on) 1 v ic=3a, v ce =2v* static forward current transfer ratio h fe 500 400 100 i c =0.1a, v ce =2v* i c =3a, v ce =2v* i c =10a, v ce =2v* e-line to92 compatible ZTX688B 3-232 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 40 pf v cb =10v, f=1mhz switching times t on t off 40 500 ns ns i c =500ma, i b1 =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX688B -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-233
npn silicon planar medium power high gain transistor issue 2 ? may 94 features * 12 volt v ceo * gain of 400 at i c =3 amps * very low saturation voltage applications * darlington replacement * flash gun convertors * battery powered circuits * motor drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 12 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5v peak pulse current i cm 10 a continuous collector current i c 3a practical power dissipation* p totp 1.5 w power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 12 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 12 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =10v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.04 0.06 0.18 0.35 v v v v i c =0.1a, i b =1ma i c =0.1a, i b =0.5ma* i c =1a, i b =50ma* i c =3a, i b =20ma* base-emitter saturation voltage v be(sat) 1.1 v i c =3a, i b =20ma* base-emitter turn-on voltage v be(on) 1 v ic=3a, v ce =2v* static forward current transfer ratio h fe 500 400 100 i c =0.1a, v ce =2v* i c =3a, v ce =2v* i c =10a, v ce =2v* e-line to92 compatible ZTX688B 3-232 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 40 pf v cb =10v, f=1mhz switching times t on t off 40 500 ns ns i c =500ma, i b1 =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance:junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX688B -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-233
-55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( s at) - (v olts) v ce(sat) v i c i c - collector current (amps) v ce ( s at) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - no r mal ised ga i n v be ( s at) - (v olts) v be - (v olts) i c - c o l le c to r c u r r e nt (amp s ) v ce =2v v ce =2v 1.5k 1k 500 h f e - t yp i cal gain v ce - collector voltage (volts) safe operating area 0.1 100 110 0.01 0.1 1 10 single pulse test at t amb =25c -55c +25c +100c +175c i c /i b =100 t amb =25c i c /i b =10 i c /i b =200 i c /i b =100 i c /i b =100 -55c +25c +100c +175c 0 0 d.c. 1s 100ms 10ms 1.0ms 0.1ms ZTX688B 3-234
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